Method for fabrication vertical NPN and PNP structures utilizing ion-implantation

Method for fabricating vertical NPN and PNP structures on the same semiconductor body comprising:

• providing a P monocrystalline semiconductor substrate;
• forming a pattern of N regions in said substrate;
• growing an N epitaxial layer on the surface of said substrate having said N regions;
• forming isolated regions of monocrystalline semiconductor in said substrate having said epitaxial layer thereon wherein said N regions are within the isolated regions designated to have NPN and PNP devices formed therein;
• implanting a buried P emitter region in the PNP designated regions;
• simultaneously forming the P base region in the NPN designated regions and a P emitter reachthrough in the PNP designated regions;
• simultaneously forming an N reachthrough to the collector region in the NPN regions and the N region under the PNP regions;
• simultaneously forming the N emitter region in the NPN regions, an N contact region to the collector reachthrough in the NPN regions, and N contact region to the N region under the PNP regions, and an N base contact region to the said N epitaxial layer in the PNP regions;
• forming a Schottky Barrier collector contact in the PNP regions;
• and
• forming electrical contacts to the NPN and PNP regions in said body, and to the N region under the PNP region for the junction isolation of the PNP structures from the rest of said semiconductor body.