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US 4,152,182 AGranted
Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide
AssigneeInternational Business Machines Corporation
InventorRichard F. Rutz
Life of this patent
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Abstract
Electronic grade aluminum nitride semiconductor material may be uniformly nucleated and epitaxially formed on an aluminum oxide substrate by reacting aluminum oxide or aluminum nitride with nitrogen in the presence of carbon.
Claims3
The process of epitaxially forming electronic grade aluminum nitride on an aluminum oxide substrate comprising the steps of:
- positioning carbon and a source of aluminum oxide in convection proximity to an aluminum oxide crystal substrate,
- heating said substrate to a temperature of at least 1670.degree. C. and said source to a temperature of at least 1900.degree. C. while passing a gaseous mixture comprising nitrogen an hydrogen past said source and said substrate,
- applying heat for the duration of the formation of an aluminum nitride film on said aluminum oxide crystal substrate.
Dependencies are inferred from the claim text.