Multicolor light emitting diode array
AssigneeInternational Business Machines Corporation
InventorsFrank F. Fang, Kwang K. Shih
Life of this patent
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Abstract
Multicolor light emitting diode arrays can be made using a binary semiconductor substrate on which is grown a graded epitaxial region of an AB.sub.1-x C.sub.x semiconductor. Diodes emitting various light colors can selectively be formed in different regions of the gradient by etching away a portion of the graded region. Arrays of colored light emitting diodes can be made by the techniques of diffusion and selective etching of the graded material.
Claims9
An electrical to electrooptical energy conversion device comprising a monocrystalline semiconductor body of the type AB.sub.1-x C.sub.x,
- said body having at least one major surface and having the variable x evenly varying along a vertical dimension with respect to said major surface throughout the full range from 0 to 1, and
- at least one p-n junction formed in said body at an exposed position corresponding to a particular value of x within said evenly varying full range.
A light emitting diode array comprising a monocrystalline semiconductor body of the type AB.sub.1-x C.sub.x said body having at least one major surface and having the variable x evenly varying along a vertical dimension with respect to said major surface throughout the full range from 0 to 1, and
- a plurality of selectable color light emitting diodes made at exposed selected depths in said body governed by the value of the variable x at the particular depth.
A semiconductor intermediate manufacturing structure comprising a monocrystalline semiconductor body made up of a substrate member epitaxially contiguous with a plurality of regions AB.sub.1-x C.sub.x semiconductor material having the variable x evenly varying throughout the full range from 0 to 1 from said substrate member to an upper surface, said AB.sub.1-x C.sub.x regions separated by transverse slots.
Dependencies are inferred from the claim text.