Method for the epitaxial deposition of a semiconductor material by electrical polarization of a liquid phase at constant temperature
AssigneeU.S. Philips Corporation
InventorElie Andre
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Abstract
A method for the epitaxial deposition of a semiconductor by electrical polarization of a liquid phase at constant temperature. Outside the growth time the polarization is applied in the direction of the cooling by the Peltier effect with a current density which is lower than the threshold which causes the growth and which lies near same.
Claims8
A method for the epitaxial deposition from a liquid phase, of a layer of semiconductor compound material on a substrate, comprising the steps of providing said substrate and said liquid phase in a space and applying electrical polarization between said solid and liquid in said space which is maintained at a constant and uniform temperature, said polarization being applied so that outside the growth time of said epitaxial deposit, the polarization is in the direction which causes a cooling by the Peltier effect and with a current density which is lower than the threshold level which causes the growth of said epitaxial deposit.
Dependencies are inferred from the claim text.