Secondary electron multiplication target
AssigneeTokyo Shibaura Electric Co., Ltd.
InventorHiroshi Washida
Life of this patent
Estimating the term…
Abstract
A secondary electron multiplication target for a secondary electron conduction type which comprises a conductive support layer and a secondary electron emitting layer deposited on the support layer. This secondary electron emitting layer is a porous layer consisting of fine particles of a humidity proof substance having higher melting point and electric resistance than MgO, for example, MgF.sub.2. This porous layer consists mainly of primary particles each having an average particle size of scores of angstroms to five hundred angstroms.
Claims5
A secondary electron multiplication target for a secondary electron conducting type vidicon comprising an electrically conductive support layer and a secondary electron emitting layer provided on that side of said support layer which faces a cathode emitting scanning electrons, wherein said secondary electron emitting layer is a porous layer consisting of an agglomeration of primary particles of at least one compound selected from the group consisting of CaF.sub.2, MgF.sub.2 ,and SrF.sub.2 ;
- said porous layer being formed by evaporating said compound from an evaporating source and said primary particles being those unagglomerated particles which are just emitted from said evaporating source and each have an average particle size ranging from scores of angstroms to 100 angstroms.
Dependencies are inferred from the claim text.