Surface passivation of IV-VI semiconductors with As.sub.2 S.sub.3
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsRichard B. Schoolar, James D. Jensen
Life of this patent
Estimating the term…
Abstract
The process of coating epitaxial films of lead chalcogenide materials with s.sub.2 S.sub.3 to insulate the films from the effects of oxygen upon exposure to air.
Claims52
A process for preparing a semiconductor device of a lead chalcogenide, comprising:
- evaporating in a vacuum a film of a lead chalcogenide on a substrate;
- and,
- then coating in the vacuum the element so produced with arsenic trisulfide.
A process for preparing an element from a lead chalcogenide, comprising:
- evaporating in a vacuum a film of a lead chalcogenide as a substrate;
- cooling in the vacuum the element so produced;
- and,
- then coating in the vacuum the element with arsenic trisulfide.
A process for passivating an element prepared from a lead chalcogenide, comprising:
- annealing the element in a closed container from which all air has been removed;
- and,
- then coating the element in the vacuum with arsenic trisulfide.
A process for passivating an element prepared from a lead chalcogenide, comprising:
- annealing the element in a closed container from which all air has been removed;
- and,
- then coating the element with arsenic trisulfide before exposing the element to air.
A process for passivating an element prepared from a lead chalcogenide, comprising:
- annealing the element in a closed container from which all air has been removed;
- cooling the element in the vacuum;
- and,
- then coating the element in the vacuum with arsenic trisulfide.
A semiconductor device, comprising:
- a lead chalcogenide member having a first type conductivity;
- the member having at least one major surface;
- a region of second and opposite type conductivity disposed into the member;
- the region having an end surface coplanar with one major surface;
- and
- a layer of arsenic trisulfide disposed on the major surface about the end surface.
A lead chalcogenide semiconductor device with a passivating coating comprising arsenic trisulfide in direct, intimate contact with the surface of the device, the coating being formed by a low temperature vacuum evaporation process.
A lead chalcogenide semiconductor device with a passivating coating comprising arsenic trisulfide in direct, intimate contact with the surface of the device, the coating being formed by a low temperature vacuum evaporation process and having a thickness of approximately one-quarter wavelength of the electromagnetic energy to which the device is responsive.
A semiconductor element, comprising:
- a body of semiconductor material having at least two regions of opposite type conductivity with a P-N junction disposed between, and formed by the abutting surfaces of, each pair of regions of opposite type conductivity;
- an end portion of at least one P-N junction exposed at a surface of the body;
- and,
- a coating of arsenic trisulfide disposed on the exposed end portion of the at least one P-N junction.
A semiconductor device, comprising:
- a lead chalcogenide member having a volume of first type conductivity;
- the member having at least one major surface;
- a region of second and opposite type conductibity disposed into the volume;
- a P-N junction formed by contiguous surfaces of the region and the volume;
- the junction extending to one major surface;
- and
- a layer of arsenic trisulfide disposed on the major surface and covering the junction.
A semiconductor device, comprising:
- a lead chalcogenide member having a volume of first type conductivity;
- the member having at least one major surface;
- a region of second and opposite type conductivity disposed into the volume;
- the region having an end surface coplanar with one major surface;
- an electrical contact affixed to the end surface;
- and
- a coating of arsenic trisulfide disposed on the one major surface, on the electrical contact, and about the end surface.
Dependencies are inferred from the claim text.