US 4,119,483 AGranted

Method of structuring thin layers

AssigneeU.S. Philips Corporation

InventorsHubertus Hubsch, Ursula Convertini, Heinz Dimigen, Holger Luthje

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Abstract

A method of structuring oxide layers, nitride layers or magnetic layers in such manner that a photolacquer mask is manufactured on a substrate and the layer to be structured is provided by means of cathode sputtering both on the photolacquer mask and on the surfaces of the substrate not covered with lacquer. The substrate is then treated with a solvent attacking the lacquer mask; the mask swells up and the parts of the layer to be structured present thereon are chipped off. In order to stimulate this latter process, a layer is provided below the photolacquer mask on the substrate relative to which photolacquer has a small adhesive capacity and, after providing the layer to be structured, an increase in volume of the lacquer mask is produced by thermal treatment. After the complete removal of the photolacquer mask and the parts of the layer to be structured present thereon, the structured thin layer remains on the substrate as a negative of the pattern of the photolacquer mask.

Claims15

Dependent claims

A method of providing a structure comprising a certain thin layer, comprising the steps of:

(a) providing a substrate having a surface;
(b) providing directly on said substrate surface a support layer;
(c) providing a mask layer of photolacquer material on said support layer, said mask layer locally masking said support layer, said support layer being characterized by a relatively low adhesiveness for said photolacquer material, with such characteristic remaining substantially unchanged after the hereinafter mentioned heat treatment;
(d) providing said certain thin layer on said mask layer and exposed parts of said substrate surface;
(e) heating said mask layer in a certain temperature range such that the chemical reaction capacity thereof is unaffected in a detrimental manner, said temperature range being above the flow limit of said photolacquer but below such temperature at which "cross-linking" of the photolacquer is produced;
and
(f) dissolving said masking layer and removing parts of said certain thin layer disposed thereon, whereby the remaining parts of said certain layer have a desired pattern.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 05/766,662Filed 8 Feb 1977 · continuation
Priority: DE 243656830 Jul 1974
Granted: 10 Oct 1978
Term ends: Not estimatedThe source records don’t support an estimate.

Classification11 codes

H05K 3/048
By selective transfer or selective detachment of a conductive layer: using a lift-off resist pattern or a release layer pattern
G03F 7/11
Characterised by structural details, e.g. supports, auxiliary layers: having cover layers or intermediate layers, e.g. subbing layers
G03F 7/26
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g.…
G03F 7/428
Stripping or agents therefor: using ultrasonic means only