High voltage cable
AssigneeTelefonaktiebolaget L M Ericsson
InventorsMats Gunnar Olsson, Carl Ove Tollerz, Sven Gunnar Wretemark
Life of this patent
Estimating the term…
Abstract
A cable for carrying high voltage has encompassed on its metallic conductor core with an inner layer of semiconducting material. An insulation layer encompasses this semiconducting layer and is in turn encompassed by an outer semiconducting layer. This outer semiconducting layer is strongly bonded to the underlying insulation layer and its outer surface resistivity is selected to be within the range of 10.sup.7 - 10.sup.9 ohm/square. Such resistivity range equalizes the voltage distribution within the cable jacket and also facilitates splicing cable ends and terminating the cable as the outer semiconducting layer need not and in fact cannot be readily removed.
Claims6
A high voltage cable comprising:
- an inner conductor, an inner semiconducting layer surrounding said conductor,
- an insulation layer surrounding said inner semiconducting layer, an outer semiconducting layer surrounding said insulation layer, said outer semiconducting layer being strongly bonded to said insulation layer and having an electrical surface resistivity measured along the outer surface of the outer semiconducting layer and being within the range of 10.sup.7 and 10.sup.9 ohm/square and essentially voltage independent;
- a further semiconducting layer surrounding said outer semiconducting layer in surface engagement therewith, said further semiconducting layer having an outer sheet resistivity of at most 10.sup.6 ohm/square;
- shielding means including metal wires encompassing said further semiconducting layer;
- said cable further comprising an end for connection purposes at which said shielding means and said further semiconducting layer being removed to leave said inner conductor projecting therebyond covered, in succession, by said inner semiconducting layer, said insulation layer and said outer semiconducting layer, and a semiconductor connection between said outer semiconducting layer and said inner conductor, the combination of said value of surface resistivity of said outer semiconducting layer and said bonding of the outer semiconducting layer to said insulation layer providing a voltage gradient between the free end of the inner conductor and the edge of the shielding means of sufficiently low value to prevent corona at the edge of the shielding means while minimizing creeping current paths and flash over.
Dependencies are inferred from the claim text.