Device for deposition of semi-conductor material

A device for the deposition of semiconductor material, in particular silicon, from a reaction gas permitting the thermal separation of the respective semiconductor material and the deposition upon the surface of a rod-shaped carrier made of semiconductor material which is heated within the reaction gas, in which the rod-shaped carrier, for the heating thereof, is supplied from a supply line over a remote-control electronic switch, with heating current from an alternating voltage source, with the heating current controlled over an auxiliary voltage actuating the remote-control electronic switch, the combination of a transformer having a primary winding adapted to be connected to an A.C. voltage source, said transformer having at least two separate secondary windings of like electrical characteristics, which can be applied in series with the rod-shaped carrier, remote-control electronic switches for selectively connecting said windings in series with the rod-shaped carrier whereby said carrier is selectively connected with an individual secondary winding, a plurality of secondary windings connected in series and/or parallel relation, a zero-voltage oscillation control unit, at least one electronic switch, controlling the flow of heating current through the rod-shaped carrier, controlled by said zero-voltage oscillation control unit, and an electronic threshold-value switch, responsive to current flow through said rod-shaped carrier, for controlling said remote-control switches to determine the secondary winding or windings operatively connected to said rod-shaped carrier, whereby different voltage-current relationships may be provided thereat.