Back to results
US 4,100,438 AGranted
Compound transistor circuitry
AssigneeNippon Gakki Seizo Kabushiki Kaisha
InventorKenji Yokoyama
Life of this patent
Estimating the term…
Abstract
A compound transistor circuitry having an output characteristic resembling that of a pentode vacuum tube comprises: a first field effect transistor having a saturated-type output characteristic resembling that of a pentode vacuum tube; and a second field effect transistor having an unsaturated-type output characteristic resembling that of a triode vacuum tube. The first and second field effect transistors have a conducting channel of a single and same conductivity type, respectively. The second field effect transistor is connected in series with the drain current path of the first field effect transistor. This second field effect transistor is rendered conductive only when the drain-source voltage of the first field effect transistor exceeds its pinch-off voltage.
Claims20
A compound transistor circuitry comprising:
- a first field effect transistor having a gate electrode, a source electrode and a drain electrode and having a saturated-type output characteristic resembling that of a pentode vacuum tube;
- a second field effect transistor having a gate electrode, a source electrode and a drain electrode and having an unsaturating-type output characteristic resembling that of a triode vacuum tube and being connected in series to the drain current path of said first field effect transistor;
- a first terminal connected to the gate electrode of said first field effect transistor;
- a second terminal connected to the source electrode of said first field effect transistor;
- a third terminal connected to the drain electrode of said second field effect transistor;
- and
- a biasing voltage source connected between said gate electrode of said second field effect transistor and said second terminal for providing a biasing voltage across said gate electrode of said second field effect transistor and said second terminal,
- said first field effect transistor having a conducting channel of a certain conductivity type which is identical with the conductivity type of the conducting channel of said second field effect transistor,
- said biasing voltage having a magnitude and a polarity enabling said second field effect transistor only to become and remain conductive with its said unsaturating-type output characteristic during the state of the drain-source voltage of said first field effect transistor exceeding its pinch-off voltage level.
6 more elements
A compound field effect transistor having an improved pentode type operating characteristic comprising:
- a first junction type field effect transistor having a saturated drain current to drain voltage characteristic and a given pinch-off drain voltage level, said transistor having a first gate electrode for receiving an input signal, a first source electrode and a first drain electrode,
- means including a second junction type field effect transistor having an unsaturating drain current to drain voltage characteristic for steepening the output current characteristic of the compound transistor while improving its input voltage versus output current characteristic by causing said second transistor to start and remain conductive in accordance with said unsaturating characteristic only after and during the time that said first transistor exceeds its said pinch-off drain voltage level,
- said second transistor having a second gate electrode, a second source electrode and a second drain electrode,
- said first drain electrode being connected to said second source electrode, and
- said first source and second drain electrodes being the output electrodes for exhibiting said steepened and improved characteristic of said compound transistor.
2 more elements
A compound field effect transistor having an improved pentode type operating characteristic comprising:
- a first junction type field effect transistor having a saturated drain current to drain voltage characteristic and a given pinch-off drain voltage level, said first transistor having a gate electrode, a first source electrode and a first drain electrode,
- means including a second junction type field effect transistor having an unsaturating drain current to drain voltage characteristic for steepening the output current characteristic of the compound transistor while improving its input voltage versus output current characteristic by causing said second transistor to start and remain conductive in accordance with said unsaturating characteristic only after and during the time that said first transistor exceeds its said pinch-off drain voltage level,
- said second transistor having a second gate electrode, a second source electrode and a second drain electrode,
- a first terminal,
- a second terminal, and
- a third terminal,
- said first terminal being connected to said first source electrode and to second gate electrode,
- said second terminal being connected to said second drain electrode,
- said third terminal being connected to said first gate electrode for receivig an input signal,
- said first drain electrode being connected to said second source electrode, and
- said first and second terminals being the output terminals for exhibiting said steepened and improved characteristic of said compound transistor.
8 more elements
A compound field effect transistor having a pentode type output characteristic with its initial slope decreased and the range of saturation expanded, comprising:
- a first junction type field effect transistor having a saturated drain current to drain voltage characteristic and having a first gate electrode, a first source electrode and a first drain electrode,
- means including a second junction type field effect transistor having an unsaturating drain current to drain voltage characteristic for decreasing the initial slope of the input voltage versus output current characteristic of the compound transistor and for also expanding its range of saturation by causing said second transistor to begin and remain conducting in accordance with said unsaturating characteristic before said first transistor becomes saturated,
- said second transistor having a second gate electrode, a second source electrode and a second drain electrode,
- a first terminal,
- a second terminal, and
- a third terminal,
- said first terminal being connected to said first source electrode and to said second gate electrode,
- said second terminal being connected to said second drain electrode,
- said third terminal being connected to said first gate electrode for receiving an input signal,
- said first drain electrode being connected to said second source electrode, and
- said first and second terminals being the output terminals for exhibiting the decreased initial slope and expanded saturation range characteristic of said compound transistor.
8 more elements
Dependencies are inferred from the claim text.