Apparatus improvements for growing single crystalline silicon sheets
AssigneeRCA Corporation
InventorsSamuel Berkman, Michel Thomas Duffy, Kyong-Min Kim, Glenn Wherry Cullen
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Abstract
Mechanical components such as dies and crucibles, which come in contact with a silicon melt during the formation of single crystalline shaped silicon particles, e.g. thin sheets or ribbons, are coated with silicon oxynitride deposited by chemical vapor deposition techniques.
Claims5
In an apparatus for growing single crystalline silicon in sheet or ribbon form comprising a crucible and die in contact with molten silicon the improvement which comprises a protective layer of silicon oxynitride of the general formula SiO.sub.(3/2)(x) N.sub.(4/3)-(x), wherein x is equal to or greater than 0.1 but equal or less than 0.8, applied by chemical vapor deposition on the portions of said crucible and die in contact with said molten silicon.
Dependencies are inferred from the claim text.