MOSFET buffer for TTL logic input and method of operation
AssigneeMostek Corporation
InventorsPaul R. Schroeder, Robert J. Proebsting
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AssigneeMostek Corporation
InventorsPaul R. Schroeder, Robert J. Proebsting
Estimating the term…
An input buffer for MOSFET integrated circuit for receiving low level voltage signals even below the threshold voltages of the transistors comprising the circuit is described. A reference voltage between two logic levels of the input voltage, such as TTL logic signals of 0.8 volts and 1.8 volts, is trapped on a reference storage node and the logic input voltage is trapped on a data input storage node. The two trapped voltages are then capacitively boosted by the same voltage to a level well above the transistor threshold voltage so that the differences in the voltage levels can be amplified, and the logic signal latched up by conventional circuitry. The voltage levels need be only momentarily boosted above the threshold level. The circuit includes a system for protecting against input voltage undershoot which includes another capacitive input storage node with a first trapping transistor between the logic input to the circuit and the second storage node and a second trapping transistor between the second storage node and the data input storage node. This prevents any degradation of voltage level on the data storage node should the input logic level momentarily be pulled more than one threshold below the level, typically ground, to which the gates of the transistors are taken after the voltage is trapped on the data node.
In an MOSFET integrated circuit chip, the data input system comprising:
In an MOSFET integrated circuit chip, the method for inputting, sampling and storing an input voltage on the chip which comprises transferring at least a portion of the input voltage level through a first transistor to a capacitive isolation node and from the capacitive isolation node through a second transistor to a capacitive storage node, and then turning the first and second transistors off to trap a voltage level on the isolation node and a voltage level on the storage node and capacitively boosting the voltage stored on the storage node to a higher voltage and producing a logic level from the higher voltage representative of the level of the input voltage.
Dependencies are inferred from the claim text.