Method for synthesis of III-V compounds
AssigneeU.S. Philips Corporation
InventorGuy Michel Jacob
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Abstract
The invention relates to a method for the synthesis of a semiconductor compound comprising at least one element of column III of the periodic table of Mendeleev, and an element of column V having a vapor pressure higher than that of element(s) III at the synthesis temperature of the said compound, and according to which, in a closed space, a liquid mass of element(s) III, placed in a first zone of said space which is heated at relatively high temperatures and is contacted with vapors obtained by evaporation of element V, said element V being placed in a second zone of the said space in a non-gaseous form, the evaporation temperature of element V being higher than that of the coldest point provided in a third zone of the said space, and the said first zone being situated between the second and the third zone.
Claims9
A method for the synthesis of a III-V semiconductor compound, wherein the group III element is selected from the group consisting of gallium and indium and the group V element is selected from the group consisting of phosphorus and arsenic, the group V element having a vapor pressure higher than that of the group III element at the synthesis temperature of said compound, said method comprising:
- placing in a first zone in a reaction vessel the group V element in non-gaseous form, placing in a second zone, in said reaction vessel, adjacent to said first zone, the group III element in liquid form, providing a third zone in said reaction vessel adjacent to said second zone and remote from said first zone, closing said reaction vessel, providing a temperature in said first zone higher than the evaporation temperature of said group V element, providing a temperature in said second zone higher than the liquifying temperature of said group III element but below the melting temperature of said III-V compound, the temperature in said second zone being substantially higher than the temperature in said first zone;
- providing a temperature in said third zone sufficiently low to cause condensation of said group V element in said third zone and sufficiently below the temperature in said first zone to cause a larger quantity of said group V element to be evaporated than is absorbed in said group III element liquid, maintaining said temperatures in said zones until all of said group V element in said first zone has evaporated and then reversing the temperatures in said first and third zones until all of the V element condensed in said third zone has evaporated.
Dependencies are inferred from the claim text.