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AssigneeInternational Business Machines Corporation
InventorThomas Herman DiStefano
Estimating the term…
This disclosure provides a polycrystalline semiconductor material which has a high luminous efficiency because of an especial profile of impurity concentration within each grain thereof. The regions immediately adjacent to the grain surfaces or grain boundaries are preferentially and selectively doped with impurity atoms to achieve a relatively high concentration of majority carriers of the same conductivity type as is in the grain center. As a result of the noted doping profile in the material, minority carriers which are excited within each grain by externally originated radiation are confined to the central portion of the grain where they emit electromagnetic radiation by efficient luminescent recombination. The material of this disclosure in polycrystalline thin film form obtains a high resolution screen for an electron beam optical display device.
A polycrystalline semiconductor material comprising individual grains each one of which contains an impurity or impurities arranged especially such that they dope the grain to provide majority carriers of a given density distribution,
An electron beam display device in which the luminescent screen thereof comprises;
Method of fabricating a polycrystalline film with a high luminous efficiency which comprises the step of:
Method of fabricating a multi-grain layer of semiconductor material on an insulating substrate by the steps comprising:
Method of fabricating a multi-grain layer of semiconductor material of high luminous efficiency on an insulating substrate by the steps comprising:
Method of fabricating a multi-grain layer of semiconductor material of high luminous efficiency on an insulating substrate by the steps comprising:
Dependencies are inferred from the claim text.