Integrated fabrication method of forming connectors through insulative layers

In integrated circuit fabrication, a method of forming metallic connectors through a layer of electrically insulative material and a metallization pattern for connecting such connectors on said layer comprising

• forming a first layer of electrically insulative material on a substrate,
• forming on said first insulative layer, a mask of photoresist material having a plurality of openings through which said insulative layer is exposed,
• etching to selectively remove the exposed insulative layer to form insulative layer openings through which the underlying substrate is exposed,
• depositing a first layer of metal over the masked substrate said metal layer being thinner than said insulative layer whereby said insulative layer openings are partially filled with metal,
• removing said phototresist mask to thereby remove the metal layer deposited on said photoresist with only the metal deposited in said insulative layer openings remaining,
• forming a second layer of electrically inslulative material over said first insulative layer and remaining metal,
• forming a plurality of openings through said second insulative layer respectively in registration with said openings in said first insulative layer to expose the metal remaining in said first layer openings,
• depositing a second layer of metal over said second insulative layer and said remaining metal exposed in said second insulative layer openings, and
• selectively removing portions of said second metal layer over said second insulative layer to form said metallization pattern connected to the remaining metal exposed in said second insulative layer openings.