Apparatus and method for maskless ion implantation
AssigneeRCA Corporation
InventorJacques I. Pankove
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Abstract
A method and apparatus for implanting dopant material into a substrate of semiconductive material in a preselected pattern without utilizing a mask comprises the use of a source template which is formed of the desired dopant material in the configuration of the pattern to be implanted. Ions of the dopant material are sputtered from the template by bombardment with an ionized gas, and these dopant ions are then filtered from unwanted ion species and accelerated into the substrate while remaining in the original template pattern.
Claims7
A method of implanting a dopant material into a substrate of semiconductive material in a preselected pattern without utilizing a mask, said method comprising the steps of:
- forming a source template having at least one dopant material formed thereon in said preselected pattern;
- sputtering ions of said dopant material from said template by ion bombardment from a primary ion source;
- filtering said ions of said dopant material from ions of other materials by means of an ionic filter;
- and
- implanting said ions of said dopant material into said substrate in the pattern of said source template.
An apparatus for implanting a dopant material into a substrate of semiconductive material in a preselected pattern without utilizing a mask, said apparatus comprising:
- a source template having at least one dopant material formed thereon in said preselected pattern;
- a means for sputtering ions of said dopant material from said template by ion bombardment from a primary ion source,
- an ionic filter capable of selecting desired dopant ions from ions of other materials;
- and
- means for implanting said desired dopant ions into said substrate.
Dependencies are inferred from the claim text.