Semiconductor component with dielectric carrier and its manufacture

In a component assembly incorporating a flattened, integrated semiconductor circuit structure of the type having a plurality of discrete sites of doped, semiconductor material which discrete sites are interconnected together in a predetermined manner by thin layered paths of conductive material, the improvements which comprise:

• (A) a dielectric carrier layer generally continuously overlying, and integrally bonded to, surface portions of such flattened integrated semiconductor circuit structure on one side thereof, said carrier layer being comprised of a polyimide resin,
• (B) a semiconductor wall member generally continuously perimetrically circumscribing such integrated semiconductor circuit and integrally associated therewith on the opposed side of such flattened integrated semiconductor circuit structure,
• (C) such flattened integrated semiconductor circuit structure having said layered paths of conductive material therein located in adjacent relationship to said dielectric carrier layer on said one side thereof,
• (D) such flattened integrated semiconductor circuit structure further having said discrete sites of doped semiconductor material located in laterally spaced relationship to said wall member, and
• (E) said carrier layer having a thickness at least sufficient to provide mechanical support for said circuit structure and said thin layered paths.