Growth of III-V layers containing arsenic, antimony and phosphorus
AssigneeBell Telephone Laboratories, Incorporated
InventorsJohn C. DeWinter, Robert E. Nahory, Martin A. Pollack
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Abstract
Gallium arsenide antimonide phosphide (GaAsSbP) has been successfully grown on a gallium arsenide substrate by liquid phase epitaxy. A critical amount of phosphorus initially in growth solution is depleted with consequent grading of lattice constant and bandgap in the epitaxially grown layer. The substrate and graded layer as a subassembly are well suited for use in electronic devices such as double heterostructure lasers, light-emitting diodes, Schottky barrier diodes, and p-n junction photodiodes in the near-infrared low loss region of optical fibers.
Claims7
In a process for coating a Group III-Group V substrate the steps comprising
- heating a solid having gallium, arsenic, antimony and phosphorus constituents so that a growth solution having a solution temperature is formed;
- heating said substrate to a temperature comparable to said solution temperature;
- and
- applying said growth solution to said substrate by a liquid phase epitaxial method so that a grown coating results,
- said solution including gallium, arsenic, antimony and phosphorus in proportions such that the grown coating is substantially lattice matched to said substrate,
- whereby said grown coating is found to be graded in phosphorus content and to have a smooth surface having a lattice constant significantly different from said substrate so that growth of subsequent layers in electronic device manufacture is facilitated.
In a method for liquid phase epitaxial growth of a coating on a substrate having a lattice constant the steps comprising
- covering said substrate with a liquid solution comprising gallium, arsenic, antimony, and phosphorus at a temperature and composition such that the solution is in substantial equilibrium with a corresponding solid which substantially lattice matches said substrate and
- decreasing said temperature, whereby a coating layer grows lattice matched on said substrate in suitable manner for electronic device manufacture.
Dependencies are inferred from the claim text.