Transistor having improved junction breakdown protection integrated therein
AssigneeRCA Corporation
InventorPeter Joseph Kannam
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Abstract
An improved integrated transistor device has reverse bias breakdown protection for the base-collector junction. The base-collector junction is protected by means of a diode region providing a punchthrough protective mode of operation. The configuration disclosed provides a device which has comparatively stable and relatively high energy junctions therein.
Claims3
An improved semiconductor device of the type having a collector region of one type conductivity and a base region of a second type conductivity forming a base-collector PN junction therewith, said base region comprising a first portion having a comparatively low average resistivity and a second portion having a comparatively high average resistivity, an emitter region of said one type conductivity within said first portion, and a doped protective region of said one type conductivity adjacent said base region and forming a second PN junction therewith, said protective region being spaced apart from said collector region, wherein the improvement comprises:
- said doped protective region substantially surrounding said first portion and being unconnected directly to any electrode of said device so that it "floats" with respect to voltage potentials applied across said device;
- and
- a base electrode contacting said first portion of said base region.
Dependencies are inferred from the claim text.