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US 4,071,830 AGranted
Complementary field effect transistor linear amplifier
AssigneeMotorola, Inc.
InventorRobert Charles Huntington
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AssigneeMotorola, Inc.
InventorRobert Charles Huntington
Estimating the term…
A linear voltage amplifier includes an input stage which has a P channel MOSFET load device and an N channel input device. The complementary amplifier also includes a feedback circuit which includes a low pass filter coupled between the output stage and the gate electrode of the P channel load device. The P type tub region in which the N channel input MOSFET is located is biased by an adjustable bias circuit to control threshold voltage of the input MOSFET and thereby control the DC level of the output of the complementary amplifier. In one embodiment the biasing circuit includes a P channel MOSFET coupled in series with a diode connected N channel MOSFET between two voltage supply conductors, the gate of the P channel MOSFET being connected to the gate of the P channel MOSFET load device of the input stage. The junction between the P channel MOSFET and the diode connected N channel MOSFET is coupled to one terminal of a high value resistor, the other end of which is connected to the input conductor which is connected to the gate of the N channel input MOSFET.
A complementary field effect transistor amplifier including an output circuit and an input circuit having a field effect transistor load device and a field effect transistor input device coupled in series comprising feedback circuit means coupled between said output stage and a gate electrode of said field effect transistor load device for biasing said field effect transistor load device to cause a controlled output voltage to be produced by said output circuit, wherein said feedback circuit means includes a low pass filter which acts to feedback an output signal produced at an output of said output stage to said field effect transistor load device for preventing incremental excursions of said output signal from substantially affecting the current produced by said field effect transistor load device.
Dependencies are inferred from the claim text.