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US 4,071,779 AGranted
Semiconductor switch
AssigneeHitachi, Ltd.
InventorsMitsuru Kawanami, Ichiro Ohhinata, Shinzi Okuhara
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AssigneeHitachi, Ltd.
InventorsMitsuru Kawanami, Ichiro Ohhinata, Shinzi Okuhara
Estimating the term…
A semiconductor switch of a PNPN structure comprises a PNPN switch of an equivalently four-layered structure including a P-type anode, N-type cathode, N-type gate and P-type gate, a first NPN transistor, a second PNP transistor, a level shifting circuit, and an impedance element, wherein the impedance element is connected between the collector and emitter of the first transistor, the first transistor has its collector and emitter connected to the P-type gate and N-type cathode respectively, and the second transistor has its emitter and base connected to the P-type anode and N-type gate, respectively, and has its collector connected to the base of the first transistor through the level shifting circuit. In this arrangement, the first transistor is driven by the current flowing through a PN junction at the end on the side of the anode of the PNPN switch and the level shifting circuit, so that the semiconductor switch has a great dv/dt withstanding power, operates with high sensitivity, has a high breakdown voltage in both directions and facilitates the setting of circuit constants.
A semiconductor switch comprising a PNPN switch of an equivalently four-layered PNPN structure including a P-type anode, N-type cathode, N-type gate and P-type gate, a first NPN transistor, a second PNP transistor, and a level shifting circuit, wherein said first transistor has its collector and emitter connected to the P-type gate and N-type cathode of said PNPN switch, respectively, and said second transistor has its emitter and base connected to the P-type anode and N-type gate of said PNPN switch, respectively, and has its collector connected to the base of said first transistor through said level shifting circuit.
A semiconductor switch comprising a PNPN switch of an equivalently four-layered PNPN structure including a P-type anode, N-type cathode, N-type gate and P-type gate, a first NPN transistor, a second PNP transistor, a level shifting circuit, and an impedance element, wherein said impedance element is connected between the collector and emitter of said first transistor, said first transistor has its collector and emitter connected to the P-type gate and N-type cathode of said PNPN switch, respectively, and said second transistor has its emitter and base connected to the P-type anode and N-type gate of said PNPN switch respectively, and has its collector connected to the base of said first transistor through said level shifting circuit.
A semiconductor switch comprising a PNPN switch of an equivalently four-layered PNPN structure including a P-type anode, N-type cathode, N-type gate and P-type gate, a first PNP transistor, a second NPN transistor, a level shifting circuit, and an impedance element, wherein said impedance element is connected between the emitter and collector of said first transistor, said first transistor has its emitter and collector connected to the P-type anode and N-type gate of said PNPN switch, respectively, and said second transistor has its base and emitter connected to the P-type gate and N-type cathode of said PNPN switch, respectively, and has its collector connected to the base of said first transistor through said level shifting circuit.
A semiconductor switch comprising a PNPN switch of an equivalently four-layered PNPN structure including a P-type anode, N-type cathode, N-type gate and P-type gate, a first PNP transistor, a second NPN transistor, a level shifting circuit, and an impedance element, wherein said first transistor has its emitter and collector connected to the P-type anode and N-type gate of said PNPN switch, respectively, and said second transistor has its base and emitter connected to the P-type gate and N-type cathode of said PNPN switch, respectively, and has its collector connected to the base of said first transistor through said level shifting circuit, said impedance element being connected between the P-type gate and the N-type cathode of said PNPN switch.
Dependencies are inferred from the claim text.