Method of making high resistance cermet film
AssigneeRCA Corporation
InventorsHarry Louis Pinch, Benjamin Abeles, Jonathan Isaac Gittleman
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Abstract
A cermet film includes metal particles in an insulator with the metal particles having an average diameter of from about 30A to about 120A. The cermet film has a high resistivity, and low temperature coefficient of resistivity, and is stable under electric fields of up to 10.sup.5 volts/cm. The cermet film can be formed by co-sputtering the metal and the insulator onto a substrate. The sputtered cermet film is then annealed in a reducing atmosphere whereby its resistivity is increased without a corresponding change in its temperature coefficient of resistivity.
Claims18
A method of making a high resistance cermet film comprising the steps of:
- sputtering a granular film of a metal and an insulator onto a substrate, said granular film having a metal percent volume no greater than the metal percent volume at which the percolation threshold appears, said sputtering occurring with a background pressure low enough so as to substantially prevent impurities from developing in said cermet film, and
- annealing the deposited film in a reducing atmosphere.
A method of making a high resistance cermet film, comprising the steps of:
- a. sputtering a granular film of a metal and an insulator onto a substrate at a pressure low enough so as to substantially prevent impurities from developing in said film, said granular film having a metal percent volume no greater than the metal percent volume at which the percolation threshold appears;
- and then
- b. annealing the deposited film in a reducing atmosphere so as to result in a controlled upward adjustment of the resistivity of said film, said upward adjustment being substantially independent of the composition of said film,
A method of making a high resistance cermet film, comprising the steps of:
- a. sputtering a granular film of a metal and an insulator onto a substrate at a pressure low enough so as to substantially prevent impurities from developing in said film, said granular film having a metal percent volume no greater than the metal percent volume at which the percolation threshold appears, said metal being in the form of particles having an average diameter of less than about 30A;
- and then
- b. annealing the deposited film in a reducing atmosphere so as to increase the average diameter of said metal particles to between about 30A to about 120A.
Dependencies are inferred from the claim text.