Process for fabrication of dielectric optical waveguide devices
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsSeiichi Nagata, Tsuneo Tanaka, Masakazu Fukai
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Abstract
The present invention discloses a process for fabrication of dielectric optical waveguide devices by utilizing selective epitaxial growth. Concentrated energy such as an electron or laser beam is focused on a predetermined region on the surface of a substrate during the epitaxial growth with the application of molecular beams so that the mixed crystal grown in the irradiated region may have a chemical composition different from that of the mixed crystal grown on the non-irradiated region. Since this process permits to overlaying the embedded waveguides one upon another, complex optical waveguide devices can be fabricated in a simple manner.
Claims10
A process for fabrication of dielectric optical waveguide devices by utilizing thin films of epitaxially grown mixed crystals of compounds comprising applying molecular beams of elements which become the constituents of said compounds over a surface of a crystal substrate heated at a predetermined temperature in vacuum while locally irradiating a predetermined region of the surface of said substrate with concentrated energy to thereby produce epitaxial growth conditions which are different between the irradiated region and the non-irradiated region and consequently the composition of the mixed crystal grown in the irradiated region is different from the composition of the mixed crystal grown in the nonirradiated region, whereby a region having a higher refractive index is formed within a region having a lower refractive index.
Dependencies are inferred from the claim text.