Integrated circuit structure having semiconductor resistance regions
AssigneeRaytheon Company
InventorsWilhelm H. Legat, Keith G. Taft, Karl H. Tiefert
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Abstract
A semiconductor integrated circuit which is reduced in size by having active and/or passive elements in an epitaxial layer having a [100] crystallographic surface, and having anisotropically etched regions with sloped [111] crystallographic surface walls which isolate adjacent semiconductor elements and/or regions of semiconductor material beneath said elements. Conductors interconnecting said elements are supported on the [100] and [111] crystallographic surfaces and contact said elements and/or said high conductivity regions through apertures in surface passivating protective coatings on said surfaces.
Claims12
The method of forming an integrated circuit comprising the steps of:
- forming a semiconducting layer having a <100>
- crystallographic surface on a supporting substrate comprising epitaxially depositing said layer over said substrate;
- forming in said layer a plurality of active elements with said elements having a plurality of emitter regions formed in common base regions, base contacts formed on said base regions intermediate said emitter regions, and resistive regions comprising portions of said epitaxial layer directly connected to collector regions, said collector regions forming collector junctions with said base regions, portions of the boundaries of said resistive regions being formed by etching said layer from said <100>
- crystallographic surface along <111>
- crystallographic surface planes at least through said layer;
- and
- forming conductors which are supported on insulating layers on said <100>
- and <111>
- surfaces of said layer and which interconnect regions of at least some of said elements.
The method of forming an integrated circuit comprising the steps of:
- forming a semiconducting layer having a <100>
- crystallographic surface on a supporting substrate comprising epitaxially depositing said layer over said substrate;
- forming in said layer a plurality of active elements with said elements having a plurality of emitter regions formed in common base regions, base contacts formed on said base regions intermediate said emitter regions, and resistive regions comprising portions of said epitaxial layer directly connected to collector regions, said collector regions forming collector junctions with said base regions, portions of the boundaries of said resistive regions being formed by etching said layer from said <100>
- crystallographic surface along <111>
- crystallographic surface planes;
- and
- forming conductors which are supported on insulating layers on said <100>
- and <111>
- surfaces of said layer and which interconnect regions of at least some of said elements.
Dependencies are inferred from the claim text.