Low cost, high volume silicon purification process
AssigneeMotorola, Inc.
InventorWilliam Martell Ingle
Life of this patent
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AssigneeMotorola, Inc.
InventorWilliam Martell Ingle
Estimating the term…
Truly amorphous silicon having a low level of undesired impurities, and therefore suitable for semiconductor applications, may be prepared by the present process. Impure silicon, for example, metallurgical grade silicon, is prepared at an elevated temperature, e.g., above 1400.degree. C. The impure silicon and at least one binary silicon fluoride compound, e.g., silicon tetrafluoride, are chemically combined at the elevated temperature to form silicon difluoride gas. The silicon difluoride gas is polymerized. The silicon difluoride polymer is then thermally decomposed to produce the purified, amorphous silicon and binary silicon fluoride by-products. The binary silicon fluorides are recycled in the process to be chemically combined with the impure silicon. That step and the succeeding steps serve to reduce the level of unwanted impurities in the silicon produced by at least several orders of magnitude.
A process of producing pure semiconductor grade silicon which comprises:
A process for producing pure silicon, which comprises:
Dependencies are inferred from the claim text.