Semiconductor component with dielectric carrier and its manufacture

A process for the production of a component assembly incorporating a flattened, integrated semiconductor circuit of the type having a plurality of discrete sites of doped, semiconductor material which discrete sites are interconnected together in a predetermined manner by layered paths of conductive material, said process comprising the steps of:

• A. forming a said semiconductor circuit on an n.sup.+ conducting silicon wafer by depositing an n.sup.- conductive monocrystalline epitaxial silicon layer thereon, diffusing p-conducting doping material into said epitaxial layer selectively to form doped zones, depositing an insulative layer selectively thereover, and depositing electrically conductive paths selectively thereover,
• B. forming a layer of polyamide resin over the resulting said semiconductor circuit,
• C. heating said layer of polyamide resin to convert same into a layer of polyimide resin,
• D. selectively etching away portions of said n.sup.+ silicon wafer and said n.sup.- epitaxial silicon layer.