MIS switching circuit capable of enduring high voltage
AssigneeHitachi, Ltd.
InventorKenzo Masuda
Life of this patent
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Abstract
An MIS switching circuit capable of enduring a high voltage, comprises a switching FET, one or more protective FETs connected in series to the switching FET and a load connected between the drain of the protective FET and a high voltage source, wherein the load is constituted by a series connection of a plurality of FETs.
Claims6
An MIS switching circuit capable of enduring a high voltage, comprising a load, at least one protective FET having its drain connected to said load and its gate arranged for connection to a DC bias source, and a switching FET having its drain connected to the source of said protective FET and its source connected to a common potential source and its gate arranged for reception of an input signal to the switching circuit, wherein said load is constituted by a plurality of FETs connected in series with each other between a high voltage source and the drain of said protective FET, the output of the switching circuit being derived from the junction point between said load and said protective FET.
Dependencies are inferred from the claim text.