Method of manufacturing semiconductor devices

A method of making semiconductor devices comprising the steps of:

• a. providing a semiconductor substrate having a first type of conductivity;
• b. forming a first masking layer on said substrate;
• c. forming in said first masking layer at least one window;
• d. forming a doping layer having a dopant of a second type of conductivity atop said first masking layer and overlaying said window;
• e. forming an additional masking layer atop said doping layer;
• f. forming a technological structure etching a portion of said additional masking layer and a portion of said doping layer in such a way that at least two regions of said technological structure along its perimeter would be placed within said window in said first masking layer and at least two portions of said technological structure along its perimeter would be placed outside said window;
• g. narrowing said additional masking layer in said technological structure by etching said additional masking layer in the direction parallel to the surface of said semiconductor substrate;
• h. diffusing a first region of a second type of conductivity into said semiconductor substrate of the first type of conductivity from said doping layer;
• i. forming an insulating layer along the perimeter of said technological structure and overlaying a junction between said semiconductor substrate of the first type of conductivity and the diffused region of the second type of conductivity;
• j. forming windows by etching away the portions of technological structure which are not overlaid by said additional masking layer to expose the portions of the surface of said substrate at regions which are not overlaid by said first masking layer;
• k. diffusing a dopant of the first type of conductivity through at least one of said windows;
• and
• l. forming a metallization pattern.