Semiconductor fabrication method for improved device yield by minimizing pipes between common conductivity type regions

In the method of manufacture of a semiconductor device, a method of forming an emitter region with a substantial reduction in the number of pipes which result in shorts or leakages between two regions of identical conductivity, comprising the steps of;

• forming a base region of a semiconductor device, and
• introducing nucleation sites for dislocation loops by ion implanting non-dopant ions into said base region of the semiconductor device to be subsequently doped with emitter type impurity, said nucleation sites being formed near the front surface of said base region of said device, and
• subsequently introducing emitter type impurity into said region to form the emitter region whereby said nucleation sites are converted into small electrically harmless dislocation loops thereby reducing the number of pipes.