Method of making a semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorEisuke Ichinohe
Life of this patent
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Abstract
A semiconductor device is described comprising a semiconductor substrate, plural impurity-diffused regions formed in the substrate, an insulation layer formed so as to cover selected parts of the substrate, plural low-resistance semiconductor regions isolated from each other by the insulation layer and at least some of them contacting said diffused regions and conductive regions disposed in a manner to contact said low-resistance semiconductor regions, respectively. Thus, the low-resistance semiconductor regions serve as connection means between the diffused region and the conductive region, which means serves to uniform contacting level, thereby decreasing the size of the device.
Claims7
A method of making an integrated circuit semiconductor device comprising the successive steps of:
- a. providing a semiconductor substrate material of a first conductivity type,
- b. forming an insulation film having thinner parts, thicker parts and openings on a principle face of said semiconductor substrate,
- c. depositing a low-resistance semiconductor film on both the insulation film and openings,
- d. depositing an oxidation-resistant film on said low-resistance semiconductor film,
- e. forming a plurality of retained regions of said low-resistance semiconductor film by at least thinning the low-resistance semiconductor regions surrounding said retained regions, said retained regions being at least partly covered by said oxidation resistant film,
- f. introducing at least one impurity of a second conductivity type material into selected portions of the substrate region utilizing said retained regions of step (c) as a mask,
- g. oxidizing selected parts of the low-resistance semiconductor film by utilizing said oxidation-resistant film as a mask to form an insulation film,
- h. removing said oxidation-resistant film, thereby exposing a surface of said low-resistance semiconductor film, and
- i. forming metal contact films of a predetermined pattern on said exposed surface of said low-resistance semiconductor film.
Dependencies are inferred from the claim text.