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US 4,068,255 AGranted
Mesa-type high voltage switching integrated circuit
AssigneeDionics, Inc.
InventorsBernard L. Kravitz, George R. Seaton
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Abstract
The voltage characteristics of switching integrated circuits of the type disclosed in U.S. Patent No. 3,918,083 are improved by employing a mesa-type etch to physically separate the four vertical transistors. Interconnection may be carried out by wire bonding respective collector and emitter areas or, preferably, passivating materials are used to fill the etched grooves and interconnection is carried out by vapor deposition (e.g. planar) techniques.
Claims9
A mesa-photrac comprising:
- a body of semiconductive material of a first conductivity type having two major surfaces;
- four mesas in one said surface, each said mesa having an upper layer forming a base zone of opposite conductivity type material, and forming a PN junction with said body, said junction extending to the sides of said mesa;
- an emitter zone of said first conductivity type material located entirely within each said base zone and forming a PN junction reaching said one surface;
- said respective base and emitter zones forming with said body four mesa-type transistors sharing a common collector;
- and
- four conductive leads connecting base and emitter zones between adjacent pairs of said transistors.
3 more elements
The method of producing a mesa-photrac comprising:
- providing a body of semiconductive material of a first conductivity type and having two major surfaces;
- forming a layer of opposite conductivity-type material in one said surface, said layer forming a PN junction with said body;
- forming four separate zones of first conductivity type material entirely within said layer and having PN junctions reaching said one surface;
- etching said body in a general cruciform pattern to expose edges of said first-formed PN junction with the formation of four mesas;
- said four mesas and said body comprising four transistors in common collector configuration, said separate zones comprising emitters and the remainder of said one surface comprising bases;
- and
- attaching conductive leads between the emitters and bases of respective pairs of adjacent transistors.
4 more elements
Dependencies are inferred from the claim text.