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US 4,068,253 AGranted
Photoconductor element and method of making the element
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsShinji Fujiwara, Takuo Shibata
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Abstract
This invention relates to a photoconductor element comprising in the following order 1) a material having wider band gap energy than CdTe, 2) a material primarily consisting of CdTe and 3) a material primarily consisting of ZnTe doped with In. The instant material exhibits characteristics in light sensitivity over entire visible light range, and a low level of dark current and a high speed of light response. This invention further relates to a target for image pickup tube employing the element and a method of making the element.
Claims18
A photoconductor element, which comprises:
- a first layer of a suubstance hving a wider band gap encrgy then CdTe;
- a second layer of a substance primarily consisting of CdTe and deposited on said first layer;
- and
- a third layer of a substance primarily consisting of ZnTe containing indium therein and deposited on said second layer.
1 more element
Dependencies are inferred from the claim text.