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US 4,067,100 AGranted
Method of making a semiconductor device
OwnerAkira Kojima, Teruaki Aoki +1inventors
InventorsAkira Kojima, Teruaki Aoki, Norio Suzuki
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OwnerAkira Kojima, Teruaki Aoki +1inventors
InventorsAkira Kojima, Teruaki Aoki, Norio Suzuki
Estimating the term…
A method of making a semiconductor device which has sharp corners on an upper surface and wherein a passivation layer is formed over said surface and windows are formed in the passivation layer for the attaching and formation of electrodes in which a photoresist material is placed over the passivation layer and selectively removed so as to leave areas of photoresist at locations over said passivation layer wherein electrodes are to be formed after which a layer of metal is formed over the surface and the metal and photoresist is removed at those portions where the photoresist layer remained after which passivation the area is etched through the windows in the metal layer and the metal layer is then removed and the electrodes are formed in the windows.
A method of making a semiconductor device comprising the steps of providing a semiconductor body having two major surfaces, one of said surfaces having a plurality of plane surface areas surrounded by recesses and being covered with a passivation layer forming a photoresist layer in a predetermined pattern on said plane surface areas forming a metal layer on said passivation layer and said photoresist layer, removing said photoresist layer together with those portions of said metal layer formed directly thereon to form windows and removing said passivation layer by etching through said windows, further comprising the steps of removing said metal layer, and forming a metal electrode layer on the areas exposed by said etching step.
The method of forming electrodes on a semiconductor substrate having an uneven surface covered by a passivation layer comprising the steps of
Dependencies are inferred from the claim text.