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US 4,067,037 AGranted
Transistor having high f.sub.t at low currents
AssigneeMassachusetts Institute of Technology
InventorPaul Greiff
Life of this patent
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Abstract
A transistor structure capable of high frequency operation with low collector currents is obtained by fabricating the transistor using nitride techniques to minimize the emitter area and base width area beyond that obtainable by conventional masking techniques. The emitter is surrounded on three sides by low capacitance dielectric which reduces its emitter-to-collector capacitance and hence improves high frequency performance.
Claims3
A transistor having high f.sub.T at low collector current, and a low rate of falloff at high collector current comprising
- a collector,
- a base having its minimum dimension no greater than 0.1 mil contained in said collector, said base having silicon dioxide walls forming the boundary of its periphery,
- an emitter on one end of said base,
- said emitter having a dimension along the maximum dimension of said base no greater than 0.1 mil.
- said emitter having one edge and its bottom area in contact with said base and its remaining three edges in contact with said base silicon dioxide walls,
- a base contact region on said base separated from said emitter.
3 more elements
Dependencies are inferred from the claim text.