Line for transporting charges from storage elements in a storage field
AssigneeSiemens Aktiengesellschaft
InventorKurt Hoffmann
Life of this patent
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Abstract
A line as disclosed for transporting charges from one point to another. The substrate of semiconductive material has an electrical insulating layer arranged thereon. Upon this layer, a resistive layer is applied having electrodes at end points thereof for producing a drift field. Diffusion areas are arranged at the end points which are oppositely doped with respect to the semiconductor material situated under the conductive layer. Storage elements in a storage field are connected to the line and write/read circuits are positioned at ends of the line. Taps may be connected at intermediate points along the line to permit application of differing voltages to enhance charge shifting along the line.
Claims9
A method for rapidly transferring a charge from a first point to a second point along a line having a semiconductor material region, a layer of insulating material on said region, and a resistance layer on said layer of insulating material, said resistance layer having first and second end terminals and a first intermediate terminal, comprising the steps of:
- a. maintaining a relatively low potential on said first end terminal;
- b. introducing a charge into one end of said semiconductor material region adjacent the first end terminal;
- c. transporting said charge from near the first end terminal to near the first intermediate terminal, by applying a relatively high potential to said first intermediate terminal to create a continuously changing potential beneath said resistance layer between the first end and first intermediate terminals;
- d. transporting said charge from near the first intermediate terminal to near the second end terminal by applying a relatively low potential to said first intermediate terminal to replace the high potential and applying a relatively high potential to said second end terminal to create a continuously changing potential beneath said resistance layer between the second end and first intermediate terminals.
A line for transporting a charge package from a first point to a second point, comprising:
- a. a region of doped semiconductor material;
- b. an electrical insulating layer on said region;
- c. a resistance layer means on said insulating layer for creating a continuously changing potential therebeneath;
- d. first and second terminals connected at first and second end points on said resistance layer and an intermediate terminal therebetween;
- and
- e. means for applying a relatively low potential to said first terminal and a relatively high potential to said intermediate terminal for creating a continuously changing depletion layer and drift field in a portion of said semiconductor region beneath and between said first and intermediate terminals and means for applying a relatively low potential to said intermediate terminal and a relatively high potential to said second terminal for creating a continuously changing depletion layer and drift field in a portion of said semiconductor region beneath and between said intermediate and second terminals.
A storage field comprising in combination:
- a. a line for transporting a charge package rapidly between intermediate points and end points, said line including
- i. a region of first conductivity type semiconductor material;
- ii. an electrical insulating layer on said region;
- iii. an electrical resistance layer means on said insulating layer for producing a continuously changing potential between the intermediate point and end points of the line;
- iv. end electrodes and an intermediate electrode connected to said resistance layer means to enable the production of a drift field in the line of continuously changing potential when differing potentials are connected between the intermediate electrode and end electrodes;
- b. storage elements connected along the line on both sides of said intermediate electrode;
- and
- c. a write-read circuit connected at each end of the line,
- whereby write-read circuits of low sensitivity may be employed and rapid charge transfer between the storage elements and each of the read-write circuits is obtained.
Dependencies are inferred from the claim text.