Protection circuitry for insulated-gate field-effect transistor (IGFET) circuits
AssigneeRCA Corporation
InventorsRobert Charles Heuner, Michael Barnett Goldman, Stanley Joseph Niemiec, George Ira Morton
Life of this patent
Estimating the term…
Abstract
The gate insulator of an IGFET, whose gate is connected to the input terminal of a circuit, is protected by limiting the potential difference between any two circuit terminals. Each input and output terminal of the circuit is connected via protective diodes to the power supply lines of the circuit and a high conductivity, low reverse dynamic impedance, diode is connected between the power supply lines. The reverse voltage across the high conductivity diode is less than that of any other diodes at a given current level, whereby only the high conductivity diode conducts substantial currents in the reverse direction.
Claims8
In combination with an insulated-gate field-effect transistor (IGFET) circuit having an input node, having an output node to which the drain of an IGFET is connected, and having first and second power terminals between which are coupled the source-to-drain path of an IGFET, a protection circuit comprising:
- an input terminal and an output terminal;
- means connecting said input node to said input terminal;
- means connecting said output node to said output terminal;
- first, second, third, fourth and fifth diodes extrinsic to said IGFETs, each of said diodes having an anode and a cathode and each having a forward voltage drop (V.sub.F) when conducting current in the forward direction and having a reverse breakdown voltage drop (V.sub.R) when conducting current in the reverse direction which is significantly greater than its V.sub.F, and wherein the V.sub.F and the V.sub.R of said fifth diode is less than the V.sub.F and the V.sub.R, respectively, of the first, second, third or fourth diode for the same value of current therethrough;
- means connecting the anode of said first diode and the cathode of said second diode to said input terminal;
- means connecting the anode of said third diode and the cathode of said fourth diode to said output terminal;
- means connecting the cathodes of said first and third diodes to said first power terminal;
- means connecting the anodes of said second and fourth diodes to said second power terminal;
- and
- means connecting the cathode of said fifth diode to said first terminal and its anode to said second terminal.
The combination as claimed in claim 6 wherein said IGFET circuit includes two IGFETs of complementary conductivity type connected at their drains to said output node and wherein the gates of two IGFETs of complementary conductivity type are connected to said input node;
- and
- wherein said means connecting said input node to said input terminal includes an elongated region of one of said first and second conductivity type diffused in a region of the other one of said first and second conductivity type and means connecting one end of said elongated region to said input node and the other end of said elongated region to said input terminal, wherein said region of the other one of said first and second conductivity type is connected to one of said first and second power terminals;
- and further including an additional diode connected between said input node and the other end of said first and second power terminal.
In combination with a circuit having an input terminal, an output terminal, and first and second power terminals for the application therebetween of an operating potential and wherein said circuit indluces an IGFET whose source-to-drain path is connected between said power terminals, and also includes an IGFET having its drain connected to said output terminal and its substrate connected to one of said first and second terminals wherein its drain-to-substrate region forms an intrinsic diode which can provide a current carrying path between said one of said first and second terminals and said output terminal, said current carrying path having a relatively large resistance, an improved protection circuit comprising:
- a diode extrinsic to the IGFETs of said circuit, said extrinsic diode characterized in that it has substantially less series impedance than said intrinsic diode;
- and
- means connecting extrinsic diode between said output of said circuit and said one of said first and second terminals poled in the same direction as said intrinsic diode for limiting the potential between said output terminal and said one of said first and second terminals to a lower value than can be achieved by means of said intrinsic diode for the same value of current therethrough.
Dependencies are inferred from the claim text.