Method of simultaneously etching multiple tapered viaducts in semiconductor material
AssigneeInternational Business Machines Corporation
InventorsWolf-Dieter Ruh, Gerhard Trippel
Life of this patent
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Abstract
Several tapered viaducts or through-holes of uniform size are simultaneously fabricated by etching in a dielectric plate or substrate. The viaducts, which are designed in particular for nozzles for ink jet printers, have identical orifice widths, irrespective of differences in the thickness of the substrate or dielectric plate or different etch rates in the various areas of the dielectric plate. The holes are first chemically pre-etched until the first hole is about to penetrate through the plate and subsequently sputter etching is applied until all holes have penetrated through the plate, whereby the dielectric plate provides the necessary sputter etch capacity on which a negative bias occurs.
Claims8
A method of fabricating a semiconductor substrate having a plurality of core-shaped viaducts therein of substantially uniform orifice dimensions at the obverse of said substrate, comprising the steps of
- photolithographically covering the surface of said substrate at the reverse of said substrate with a pattern having locating holes at which said viaducts are desired,
- etching said substrate to form depressions at said holes in said substrate stopping short of penetrating said substrate at said obverse thereof,
- metalizing said obverse of said substrate to form a metalized layer thereat,
- etching said depressions further by bombardment of ions from said reverse of said substrate to said metalized layer at said obverse, and
- stripping said metalized layer from said substrate.
A method of fabricating a semiconductor substrate having a plurality of core-shaped viaducts therein of substantially uniform orifice dimensions at the obverse of said substrate, comprising the steps of
- etching depressions by a chemical etching method to a depth short of penetrating said substrate at said obverse thereof, and
- etching said depressions further by a sputter etching method until said viaducts penetrate said obverse,
- whereby said uniform orifices are formed.
Dependencies are inferred from the claim text.