Method of making metallic support carrier for semiconductor elements
AssigneeW. C. Heraeus GmbH
InventorsFranz Kummer, Gerhard Mai, Rolf Ruthardt, Horst Thiede
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AssigneeW. C. Heraeus GmbH
InventorsFranz Kummer, Gerhard Mai, Rolf Ruthardt, Horst Thiede
Estimating the term…
To improve the bonding layer for connecting wires to semiconductor chips with contact fingers, or contact strips, on a substrate carrier, the bonding layer is formed as spongy, microporous structure, applied to discrete positions of the contact strips by screen printing, and secured to the metallic connecting strip by a diffusion zone. Preferably, the bonding layer comprises a metal of gold, palladium, silver, aluminum and copper, or an alloy of at least two of these metals, or a base alloy of one of these metals, for example gold applied as a gold paste having an average grain size of less than 5 micro-meters, the layer being between 2 to 30 micrometers thick, preferably 3 to 10 micrometers. The metal is part of a paste of the metal in an evaporative organic carrier. After screen printing, the carrier is eliminated by heating; subsequent heating converts the metal to a spongy microporous structure bonded to the substrate carrier by a diffusion zone.
Method to make a metallic carrier for semiconductor elements and to form attachment terminals for lead wires for connection to the semiconductor structure comprising
Dependencies are inferred from the claim text.