US 4,065,840 AGranted

Method for fabricating a DSDT target

AssigneeInternational Business Machines Corporation

InventorsKyu C. Park, Arnold Reisman

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Abstract

A process for the fabrication of a deformographic storage display tube (DSDT) target in which a wafer of silicon or other etchable material is used (1) as a temporary support during the generation of the active region of the target and (2) as a supporting structure for the completed target. The DSDT target structure comprises a reflection layer on a dielectric layer supported in turn on a silicon or other etchable material wafer, the wafer being etched off at its back side to expose the dielectric layer while providing an outer frame support structure made of the wafer around the edge, with the dielectric layer being etched to form pillars of the dielectric on the backside of the reflection layer, whereby the dielectric pillars enable a deformation action to occur in the region between the pillars. An inner frame support structure comprised of a similarly etched wafer, a dielectric layer and a secondary electron emission layer is fitted against the bottoms of the pillars and bonded to the outer frame support structure, thereby forming the completed target.

Claims22

Dependent claims

Method of fabricating a DSDT target structure, comprising:

a. depositing a first dielectric layer on an etchable first wafer;
b. depositing a reflection layer on said first dielectric layer;
c. etching off the central portion of said first wafer from the back side to expose the dielectric layer and leave a supporting wafer frame around the layer edge;
and
d. etching off said first dielectric layer from the wafer side to produce a plurality of pillars of said dielectric, said dielectric pillars being spaced apart across the area of said reflection layer;
e. depositing a secondary electron emission layer on an etchable second wafer;
f. depositing on said secondary electron emission layer a second dielectric layer;
g. etching off the central portion of said second wafer to expose said secondary electron emission layer and leave a supporting wafer frame around the layer edge, the outer diameter of said supporting wafer frame of said second wafer being about the same size as the inner diameter of said supporting wafer frame of said first wafer so that said second wafer fits into said first wafer;
and
h. bonding the two supporting wafer frames of said respective first and second wafers to one another with the ends of said dielectric pillars adjacent said second dielectric layer;
whereby said dielectric pillars provide a deformation action in the region between the pillars.

8 more elements

Dependencies are inferred from the claim text.