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US 4,065,588 AGranted
Method of making gold-cobalt contact for silicon devices
AssigneeRCA Corporation
InventorAnthony Francis Arnold
Life of this patent
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Abstract
A contact for a silicon device comprises a layer of gold on the silicon, and a layer of cobalt on the gold layer. The contact is made by depositing gold on the silicon, depositing cobalt on the gold and heating the structure at a temperature between about 300.degree. and about 370.degree. C in a reducing gas atmosphere.
Claims2
A method of making a contact to a silicon body comprising:
- depositing a layer of gold directly on said silicon body;
- depositing a layer of cobalt directly on said layer of gold without intermediate exposure to oxygen;
- and
- heating said deposited silicon body to a temperature between about 300.degree. and about 370.degree. C in a reducing atmosphere.
1 more element
Dependencies are inferred from the claim text.