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US 4,064,523 AGranted
High-voltage bipolar transistor for integrated circuits
AssigneeMotorola, Inc.
InventorArnold London
Life of this patent
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Abstract
Combined junction and metallization morphology for achieving high-voltage capability in a shallow integrated bipolar transistor. The improvement comprises closely spaced emitter and base metallization in conjunction with a convexity in the surface portion of the collector-base p-n junction.
Claims5
A high-voltage semiconductor device comprising:
- a semiconductor body having a surface;
- a first region of one conductivity type at said surface;
- a second region of second conductivity type surrounding said first region to form a PN junction at said surface, said second region having a higher resistivity than said first region at said surface;
- an insulator covering said PN junction and extending over said second region;
- at least two closely-spaced conductive means on said insulator over first and second portions, respectively, of said junction and extending over said second region;
- and
- at least a third portion of said junction between said closely-spaced conductive means;
- said third portion of said junction being convex away from said second region.
5 more elements
Dependencies are inferred from the claim text.