Method of making a semiconductor device
AssigneeHitachi, Ltd.
InventorsTakashi Yokoyama, Yasuo Miyadera, Nobuhiko Shito, Hiroshi Suzuki, Yoshiaki Wakashima
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Abstract
Method of making a semiconductor device which includes applying a solution of a heterocyclic ring-containing polymer in an organic solvent to a desired surface of a semiconductor body and removing the organic solvent from the solution by heat thereby to form a coating of a polymer on the surface, wherein the polymer is a reaction product of a diamine represented by the formula: ##STR1## with a tetracarboxylic acid or anhydride of it. Since the coating exhibits good thermal stability and good electrical properties when applied to the surface of the semiconductor, it is useful as a passivating film.
Claims7
A method of making a semiconductor device in which a desired surface of a pn-junction of a semiconductor body is coated with a polyimide resin, which comprises:
- applying a solution of the polyimide resin in an organic solvent onto the surface;
- and
- removing the solvent from the solution by heating to form a coating of the resin on the surface, wherein the polyimide resin is a heterocyclic ring-containing polymer that is a reaction product at 80.degree. C or above of a diamine represented by the formula:
- ##STR3## with a tetracarboxylic acid, the heterocyclic rings of the polymer being substantially closed in the solution.
Dependencies are inferred from the claim text.