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US 4,063,993 AGranted
Method of making gang bonding interconnect tape for semiconductive devices
AssigneeNational Semiconductor Corporation
InventorCarmen D. Burns
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AssigneeNational Semiconductor Corporation
InventorCarmen D. Burns
Estimating the term…
A gang bonding interconnect tape for use in an automatic bonding machine for gang bonding of semiconductive devices is fabricated by depositing a series of electrically insulative support structures, such as rings of epoxy resin, onto a metallic tape, as of copper, there being at least one of said electrically insulative support structures for individual ones of the interconnect lead patterns to be formed in said metallic tape. The side of the metallic tape, opposite to the support structure, is photoetched with a series of interconnect lead patterns with individual ones of said lead patterns being etched in registration with individual ones of said electrically insulative support structures. The individual electrically insulative support structure, preferably in the form of a ring, is located in each of the lead patterns intermediate the central region thereof and the outer region thereof for supporting the individual leads thereof in circumferentially spaced relation.
In a method for fabrication of a gang bonding interconnect tape for interconnecting a first pattern of leads and a second pattern of leads, such interconnect tape having a series of metallic interconnectlead patterns thereon, individual ones of said lead patterns including a plurality of ribbon-shaped metallic leads extending outwardly from an inner central portion of said pattern to an outer region of said pattern and including an individual electrically insulative support structure interconnecting a plurality of said ribbon-shaped metallic leads in a region of said pattern intermediate said outer region thereof and said inner central region thereof, the steps of:
Dependencies are inferred from the claim text.