Method of producing a doped zone of one conductivity type in a semiconductor body utilizing an ion-implanted polycrystalline dopant source
AssigneeSiemens Aktiengesellschaft
InventorsJurgen Graul, Helmuth Murrmann
Life of this patent
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Abstract
A semiconductor body is coated at selected areas thereof with a polycrystalline or amorphous semiconductor layer, a dopant is ion-implanted into such polycrystalline or amorphous layer and the resultant structure is then subjected to diffusion conditions to diffuse the dopant from the polycrystalline or amorphous layer into the select zone of the semiconductor body. This process causes very slight disturbances in the crystal lattice of the semiconductor body and provides an adjustable dopant concentration at select surface zones of the semiconductor body.
Claims10
A process for producing a doped zone of one conductivity type in a monocrystalline semiconductor body comprising:
- applying a dopant-impermeable masking layer onto a select surface of said semiconductor body, said masking layer having at least one window therein for providing access to at least one select zone of the semiconductor body which is to be doped;
- applying a polycrystalline semiconductor layer uniformly over said masking layer and said select zone of the semiconductor body;
- ion implanting a dopant in said polycrystalline semiconductor layer;
- and
- diffusing said dopant from the polycrystalline semiconductor layer through said window in the masking layer and into the select zone of the semiconductor body.
A process for producing a doped zone of one conductivity type in a monocrystalline semiconductor body comprising:
- applying a dopant-impermeable masking layer onto a select surface of said semiconductor body, said making layer having at least one window therein for providing access to at least one select zone of the semiconductor body which is to be doped;
- applying an amorphous semiconductor layer uniformly over said masking layer and said select zone of the semiconductor body;
- ion implanting a dopant in said amorphous semiconductor layer;
- and
- diffusing said dopant from the amorphous layer through said window in the masking layer and into the select zone of the semiconductor body.
Dependencies are inferred from the claim text.