Semiconductor device with two passivating layers
AssigneeSony Corporation
InventorsTakeshi Matsushita, Hisao Hayashi, Teruaki Aoki, Hidenobu Mochizuki
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Abstract
A semiconductive device is provided which includes a single crystal substrate. A first insulating layer arranged on one surface of the substrate is of polycrystalline silicon containing oxygen. A second insulating layer formed on the first insulating layer is of polycrystalline silicon containing one of a group consisting of nitrogen, Si.sub.3 N.sub.4, Al.sub.2 O.sub.3 and silicone resin. The substrate includes at least one PN junction which extends to the said surface of the substrate. A novel method of making is also disclosed.
Claims6
A semiconductive device comprising a semiconductive single crystal substrate;
- a first passivating layer of polycrystalline silicon containing oxygen in the range between 2 and 45 atomic percent on and having a first surface in substantial electrical contact with a first surface of said substrate, a second passivating layer which is selected from the group consisting of polycrystalline silicon containing nitrogen, Si.sub.3 N.sub.4, Al.sub.2 O.sub.3 and silicone resin on and having a first surface in contact with a second surface of said first passivating layer and said first and second surfaces of said first passivating layer being substantially parallel.
A semiconductive device comprising an emitter region;
- a base region;
- a collector region;
- and forming a junction between said base region and collector region;
- and a first passivating layer of polycrystalline silicon containing oxygen in the range of between 2 to 45 atomic percent having a first surface on and in substantial electrical contact with the exposed portion of said junction and a second passivating layer which is selected from the group consisting of polycrystalline silicon containing nitrogen, Si.sub.3 N.sub.4, Al.sub.2 O.sub.3 and silicone resin on a second surface of said first passivating layer.
A semiconductive device comprising a semiconductive single crystal substrate;
- a first passivating layer of polycrystalline silicon containing oxygen in the range of 2 to 45 atomic percent on and having a first surface in substantial contact with a first surface of said substrate, a second passivating layer of polycrystalline silicon containing nitrogen of more than 10 atomic percent on and having a first surface in contact with a second surface of said first passivating layer and said first and second surfaces of said first passivating layer being substantially parallel.
A semiconductive device comprising a semiconductive single crystal substrate, a first passivating layer of polycrystalline silicon containing oxygen in the range of 2 to 45 atomic percent on and having a first surface in substantial electrical contact with a first surface of said substrate, a second passivating layer of polycrystalline silicon containing nitrogen of more than 10 atomic percent formed on and having a first surface in contact with a second surface of said first passivating layer, said first and second surfaces of said first passivating layer being substantially parallel and a silicon dioxide layer on and having a first surface in contact with a second surface of said second passivating layer, said first and second surfaces of said second passivating layer being substantially parallel.
Dependencies are inferred from the claim text.