Circuit for the production of read-out pulses
AssigneeSiemens Aktiengesellschaft
InventorNikolaus Kirschner
Life of this patent
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Abstract
A circuit for producing read-out pulses for storage matrices having MI.sub.1 I.sub.2 S transistors includes a MI.sub.1 I.sub.2 S transistor which is subjected to the same writing processes in the same way as the MI.sub.1 I.sub.2 S transistors of the storage matrix, and a read-out voltage is established by this MI.sub.1 I.sub.2 S transistor.
Claims7
For use with a storage matrix of MI.sub.1 I.sub.2 S storage transistors each having a gate and connected in rows with the gates connected to gate lines, a circuit for producing read-out pulses comprising:
- a further MI.sub.1 I.sub.2 S transistor including a source-drain path, and a gate connected to a gate line as the gates of the MI.sub.1 I.sub.2 S transistors of the matrix;
- and
- control means connected to said source-drain path and to said gate for operating said further MI.sub.1 I.sub.2 S transistor in the same manner as said MI.sub.1 I.sub.2 S storage transistors, said control means connecting said source-drain path in a voltage divider circuit which is operable to produce read-out voltage pulses on the gate line.
For use with a storage matrix of MI.sub.1 I.sub.2 S storge transistors arranged in rows with each having a gate connected to a gate line, a circuit for producing read-out voltages, comprising:
- an input for receiving input signals;
- an output for connection to the gate line;
- a load transistor connected to a first potential and to said output;
- an input transistor including a gate connected to said input, and a source-drain path;
- and
- a MI.sub.1 I.sub.2 S transistor including a gate connected to said output and a source-drain path connecting said source-drain path of said input transistor to a second potential,
- said circuit operable in response to an input signal which is less than the threshold voltage of said input transistor to provide an output signal which is equal to the first potential minus the threshold potential of said load transistor, and operable in response to an input signal of approximately the first potential to provide an output signal which is equal to the sum of the lower threshold voltage of said MI.sub.1 I.sub.2 S transistor and the effective gate voltage of said MI.sub.1 I.sub.2 S transistor.
Dependencies are inferred from the claim text.