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AssigneesTaisei Denski Kabushiki Kaisha, Nobuo Yasujima
InventorsNobuo Yasujima, Natsuo Itokawa, Juichiro Arai
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A method for manufacturing a highly stable metal thin film resistor including a substrate having deposited thereon a sputtered tantalum-silicon alloy film containing from 50-72 atomic percent of silicon, comprising heating the as-sputtered amorphous film to a temperature of between 500.degree. C and 750.degree. C for a time period of from 1 to 60 minutes in an ambient atmosphere of air or oxidizing gas or in an ambient atmosphere of inert gas or a vacuum. The as-sputtered film becomes completely crystallized, and a tantulum-silicon alloy thin film resistor which is high in stability, high in specific resistance and has a low temperature coefficient of resistance is obtained.
A method for manufacturing a stable metal thin film resistor comprising:
A method for manufacturing a stable metal thin film resistor comprising:
A stable metal thin film resistor consisting of a sputtered tantalum-silicon alloy film containing from 50 to 72 atomic percent of silicon deposited upon a substrate and having a temperature coefficient of resistance of a low value within the range of +100 to -200 ppm/.degree. C., said metal thin film resistor having been completely crystallized by heat-treating the same at a temperature within the range of 500.degree.-750.degree. C. for a time period ranging from 1 to 60 minutes in an ambient atmosphere selected from the group consisting of air and an oxidizing gas.
Dependencies are inferred from the claim text.