Slow rise time write pulse for gas discharge device

A circuit for operating a gas discharge display memory device having a plurality of cells, said device including a pair of opposed electrode arrays with proximate electrode portions of at least one electrode in each array defining the cells;

• an ionizable gas volume between the spaced electrode portions of each cell;
• and a dielectric charge storage member having a low operating voltage surface in contact with the gas insulating at least one electrode portion of each cell from the gas, said circuit comprising:
• a sustainer voltage source connected between said opposed electrodes for applying an alternating voltage wave form to said cells;
• a pulser means connected to said opposed electrodes for generating a write pulse having a relatively slow rise time leading edge and an erase pulse having a relatively fast rise time leading edge;
• and
• control and addressing means connected to said pulser means for selecting one of said cells and for directing said pulser means to apply said write pulse or said erase pulse to said selected cell.

A method of manipulating the discharge state of individual cells of a gas discharge display/memory device which comprises:

• applying a periodic alternating polarity sustainer voltage to said cells having a magnitude and duration sufficient to maintain a discharge in any cell which is in the "on state";
• turning a cell in the "off state" to the "on state" by applying a write pulse having a relative slow rise time leading edge;
• and
• turning a cell in the "on state" to the "off state" by applying an erase pulse having a relatively fast rise time leading edge.