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OwnerKuzma Andrianovich Andrianov, Mikhail Izmailovich Topchiashvili +7inventors
InventorsKuzma Andrianovich Andrianov, Mikhail Izmailovich Topchiashvili, Lotary Mikhailovich Khananashvili, Alexei Vladimirovich Danilov, Evgeny Ivanovich Ryabtsev, Dali Georgievna Pagava, Dzhimsher Shalvovich Bodzhgua, Veniamin Demyanovich Grigoriev, Vladimir Mikhailovich Fridland
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Semiconductor material consists of polyvinyldimethylsiloxane rubber, filler material conducting electricity, and a curing agent. Said curing agent is dialkylaminomethyltrialkoxysilane. The components of the proposed material are taken in the following proportion, in part by weight: Polyvinyldimethylsiloxane rubber: 100 Filler conducting electricity: 20-100 Dialkylaminomethyl trialkoxysilane: 0.5-4.
A semiconductor material consisting of polyvinyldimethylsiloxane rubber, filler material conducting electricity and a curing agent, which is dialkylaminomethyl trialkoxysilane, said components being taken in the following proportion (parts by weight):
A process for preparing a semiconductor material consisting of polyvinyldimethylsiloxane rubber, filler material conducting electricity and a curing agent, said components being 100 parts by weight polyvinyldimethylsiloxane rubber, 20-100 electrically conductive filler material and 0.5-4 dialkylaminomethyl trialkoxysilane which comprises mixing a solution of the polyvinyldimethylsiloxane rubber with the electrically conductive filler material into a paste-like mass, adding the dialkylaminomethyl trialkoxysilane and mixing until a homogeneous mixture is obtained, shaping said mixture at from 5.degree. to 40.degree. C and then heating said material at temperatures of 100.degree. C and then 120.degree. C each for 2 hours and 150.degree. C and then 200.degree. C each for 4 hours.
Dependencies are inferred from the claim text.