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US 4,062,103 AGranted
Method for manufacturing a semiconductor device
AssigneeTokyo Shibaura Electric Co., Ltd.
InventorHaruo Yamagishi
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Abstract
A method comprises forming a Schottky barrier forming a metal layer on one surface of a gallium arsenide substrate using niobium, tantalum and/or vanadium to provide a Schottky barrier, and subjecting the Schottky barrier to heat treatment at 350.degree. to 800.degree. C so as to render it thermally stable.
Claims6
A method for manufacturing a semiconductor device comprising the steps of:
- forming a Schottky barrier metal layer of niobium on one surface of a gallium arsenide substrate to provide a Schottky barrier therebetween;
- forming a blocking metal layer on the Schottky barrier metal layer made of at least one material selected from the group consisting of molybdenum and tungsten;
- forming a gold electrode layer on the blocking metal layer, and then;
- subjecting the Schottky barrier to heat treatment at 350.degree. to 800.degree. C to make it thermally stable.
1 more element
Dependencies are inferred from the claim text.